ST61 Specs and Replacement
Type Designator: ST61
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1000 MHz
Collector Capacitance (Cc): 1.5 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO72
ST61 Substitution
- BJT ⓘ Cross-Reference Search
ST61 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BST60; BST61; BST62 PNP Darlington transistors 1999 Apr 27 Product specification Supersedes data of 1997 Apr 16 Philips Semiconductors Product specification PNP Darlington transistors BST60; BST61; BST62 FEATURES PINNING High current (max. 0.5 A) PIN DESCRIPTION Low voltage (max. 80 V) 1 emitter Integrated dio... See More ⇒
Detailed specifications: ST44, ST502, ST54, ST57, ST5771-1, ST5771-2, ST6008, ST6010, SS8050, ST63, ST8033, ST8035, ST8065, ST8509, ST9, ST905, STC1725
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