2N5200 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5200
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 250 °C
Transition Frequency (ft): 900 MHz
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO46
2N5200 Transistor Equivalent Substitute - Cross-Reference Search
2N5200 Datasheet (PDF)
2n5209 2n5210.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5209/DAmplifier TransistorsNPN Silicon2N52092N5210COLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 50 VdcCollectorBase Voltage VCBO 50 VdcEmitterBase Voltage VEBO 4.0 VdcCollector Current C
2n5209 2n5210.pdf
DATA SHEET2N5209 2N5210 NPN SILICON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5209 and 2N5210 are silicon NPN Transistors, manufactured by the epitaxial planar process, designed for applications requiring high gain and low noise. MAXIMUM RATINGS (TA=25C) SYMBOL UNITS Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 50 V Emitter-Base V
2n5172 2n5174 2n5209 2n5210 2n5219 2n5220 2n5221 2n5223 2n5225 2n5226 2n5228 2n5232 2n5232a 2n5249 2n5249a 2n5305.pdf
2n5202.pdf
isc Silicon NPN Power Transistor 2N5202DESCRIPTIONCollector-emitter sustaining voltage V = 90V(Min)CEO(SUS)High saturation voltageWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-current, high-speed switchingcircuits such as:low-distortion power amplifiers,oscillators,
Datasheet: 2N5191 , 2N5192 , 2N5193 , 2N5194 , 2N5195 , 2N519A , 2N52 , 2N520 , BD140 , 2N5201 , 2N5202 , 2N5203 , 2N5208 , 2N5209 , 2N520A , 2N521 , 2N5210 .
