All Transistors. 2N5201 Datasheet

 

2N5201 Datasheet and Replacement


   Type Designator: 2N5201
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 250 °C
   Transition Frequency (ft): 1100 MHz
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 75
   Noise Figure, dB: -
   Package: TO46
 

 2N5201 Substitution

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2N5201 Datasheet (PDF)

 9.1. Size:277K  motorola
 2n5209 2n5210.pdf pdf_icon

2N5201

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5209/DAmplifier TransistorsNPN Silicon2N52092N5210COLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 50 VdcCollectorBase Voltage VCBO 50 VdcEmitterBase Voltage VEBO 4.0 VdcCollector Current C

 9.2. Size:297K  motorola
 2n5208.pdf pdf_icon

2N5201

 9.3. Size:208K  international rectifier
 2n681 2n5204.pdf pdf_icon

2N5201

 9.4. Size:69K  central
 2n5209 2n5210.pdf pdf_icon

2N5201

DATA SHEET2N5209 2N5210 NPN SILICON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5209 and 2N5210 are silicon NPN Transistors, manufactured by the epitaxial planar process, designed for applications requiring high gain and low noise. MAXIMUM RATINGS (TA=25C) SYMBOL UNITS Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 50 V Emitter-Base V

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Datasheet: 2N5192 , 2N5193 , 2N5194 , 2N5195 , 2N519A , 2N52 , 2N520 , 2N5200 , 2N3906 , 2N5202 , 2N5203 , 2N5208 , 2N5209 , 2N520A , 2N521 , 2N5210 , 2N5211 .

Keywords - 2N5201 transistor datasheet

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