2N5201 Specs and Replacement
Type Designator: 2N5201
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 250 °C
Electrical Characteristics
Transition Frequency (ft): 1100 MHz
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Package: TO46
2N5201 Substitution
- BJT ⓘ Cross-Reference Search
2N5201 datasheet
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5209/D Amplifier Transistors NPN Silicon 2N5209 2N5210 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol Value Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 50 Vdc Collector Base Voltage VCBO 50 Vdc Emitter Base Voltage VEBO 4.0 Vdc Collector Current C... See More ⇒
DATA SHEET 2N5209 2N5210 NPN SILICON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5209 and 2N5210 are silicon NPN Transistors, manufactured by the epitaxial planar process, designed for applications requiring high gain and low noise. MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 50 V Emitter-Base V... See More ⇒
Detailed specifications: 2N5192, 2N5193, 2N5194, 2N5195, 2N519A, 2N52, 2N520, 2N5200, 13007, 2N5202, 2N5203, 2N5208, 2N5209, 2N520A, 2N521, 2N5210, 2N5211
Keywords - 2N5201 pdf specs
2N5201 cross reference
2N5201 equivalent finder
2N5201 pdf lookup
2N5201 substitution
2N5201 replacement
