2N5202 Specs and Replacement
Type Designator: 2N5202
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 35 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 175 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO66
2N5202 Substitution
- BJT ⓘ Cross-Reference Search
2N5202 datasheet
isc Silicon NPN Power Transistor 2N5202 DESCRIPTION Collector-emitter sustaining voltage V = 90V(Min) CEO(SUS) High saturation voltage Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-current, high-speed switching circuits such as low-distortion power amplifiers,oscillators, ... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5209/D Amplifier Transistors NPN Silicon 2N5209 2N5210 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol Value Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 50 Vdc Collector Base Voltage VCBO 50 Vdc Emitter Base Voltage VEBO 4.0 Vdc Collector Current C... See More ⇒
Detailed specifications: 2N5193, 2N5194, 2N5195, 2N519A, 2N52, 2N520, 2N5200, 2N5201, BD140, 2N5203, 2N5208, 2N5209, 2N520A, 2N521, 2N5210, 2N5211, 2N5212
Keywords - 2N5202 pdf specs
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History: 2SC5569-TD-E | BC280 | 2SC1493 | NSD154 | 2N520A | BDX61-4 | BC253CA
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