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T1025 Specs and Replacement


   Type Designator: T1025
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 140 °C
   Transition Frequency (ft): 6 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO23

 T1025 Transistor Equivalent Substitute - Cross-Reference Search

   

T1025 detailed specifications

 0.1. Size:110K  renesas
rej03g1147 hat1025rds.pdf pdf_icon

T1025

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Detailed specifications: T0004 , T0005 , T0012 , T0014 , T0015 , T0031 , T0033 , T1013 , BD335 , T1028 , T1032 , T1034 , T1038 , T1040 , T1041 , T1042 , T1043 .

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