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T1041 Specs and Replacement


   Type Designator: T1041
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Transition Frequency (ft): 0.25 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO27

 T1041 Transistor Equivalent Substitute - Cross-Reference Search

   

T1041 detailed specifications

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T1041

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM... See More ⇒

Detailed specifications: T0033 , T1013 , T1025 , T1028 , T1032 , T1034 , T1038 , T1040 , BD135 , T1042 , T1043 , T1046 , T1050 , T1159 , T1166 , T1167 , T1168 .

History: T1040

Keywords - T1041 transistor specs

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