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T1159 Specs and Replacement

   Type Designator: T1159
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 10 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 140 °C
   Transition Frequency (ft): 12 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO23

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