All Transistors. T2029 Datasheet

 

T2029 Datasheet and Replacement


   Type Designator: T2029
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.06 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO33-1
 

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T2029 Datasheet (PDF)

 0.1. Size:110K  renesas
 rej03g1164 hat2029rds.pdf pdf_icon

T2029

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.2. Size:752K  cn vbsemi
 hat2029rj.pdf pdf_icon

T2029

HAT2029RJwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

 0.3. Size:754K  cn vbsemi
 hat2029r.pdf pdf_icon

T2029

HAT2029Rwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

Datasheet: T2020 , T2021 , T2022 , T2023 , T2024 , T2025 , T2026 , T2028 , BC556 , T2030 , T2050 , T2057 , T2058 , T2059 , T2060 , T2061 , T2062 .

History: 2SD1764 | L8050HSLT3G | 2SC2906A | BD229-10 | CS1914H | MMBTA12 | BUT21A

Keywords - T2029 transistor datasheet

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