T2610 Datasheet and Replacement
Type Designator: T2610
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 14 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO5
T2610 Substitution
T2610 Datasheet (PDF)
aot2610l.pdf

AOT2610L/AOTF2610L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2610L & AOTF2610L uses trench MOSFET 60Vtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 55A / 35Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)
aot2610l.pdf

isc N-Channel MOSFET Transistor AOT2610LFEATURESDrain Current I = 55A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 10.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Datasheet: T2491 , T2492 , T2560 , T2578 , T2579 , T2580 , T2588 , T2589 , A1941 , T2611 , T2679 , T2691 , T3000 , T3002 , T3003 , T3004 , T3005 .
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History: MJF3055G | BCW71



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