2N5231 Datasheet and Replacement
Type Designator: 2N5231
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 50 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 8 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO46
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2N5231 Datasheet (PDF)
2n5232a.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n5237s.pdf

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5237S Low Power, High Voltage. Hermetic TO-39 Metal Package. Ideally Suited For Switching And General Purpose Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 150V VCEO Collector Emitter Voltage 120V VEBO Emitter Base
2n5232 a.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N52322N5232ATO-92Plastic PackageABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 50 VVCBOCollector Base Voltage 70 VVEBOEmitter Base Voltage 5VICCollector Current 1
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N4880 | 2N5387 | 2N1122 | 2N1250-1 | 2N5109B | 2N1016C | 2N5037
Keywords - 2N5231 transistor datasheet
2N5231 cross reference
2N5231 equivalent finder
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History: 2N4880 | 2N5387 | 2N1122 | 2N1250-1 | 2N5109B | 2N1016C | 2N5037



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