2N5232A Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5232A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: TO98-2
2N5232A Transistor Equivalent Substitute - Cross-Reference Search
2N5232A Datasheet (PDF)
2n5232a.pdf
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2n5172 2n5174 2n5209 2n5210 2n5219 2n5220 2n5221 2n5223 2n5225 2n5226 2n5228 2n5232 2n5232a 2n5249 2n5249a 2n5305.pdf
2n5232 a.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N52322N5232ATO-92Plastic PackageABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 50 VVCBOCollector Base Voltage 70 VVEBOEmitter Base Voltage 5VICCollector Current 1
2n5237s.pdf
SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5237S Low Power, High Voltage. Hermetic TO-39 Metal Package. Ideally Suited For Switching And General Purpose Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 150V VCEO Collector Emitter Voltage 120V VEBO Emitter Base
2n5238s.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394 DEVICES LEVELS JAN 2N4150 2N5237 2N5238 JANTX 2N4150S 2N5237S 2N5238S JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) 2N4150 2N5237 2N5238
2n5237.pdf
Data Sheet No. 2N5237Generic Part Number:Type 2N52372N5237Geometry 3111Polarity NPNREF: MIL-PRF-19500/394Qual Level: JAN - JANTXVFeatures: Silicon power transistor for use inhigh speed switching applications. Housed in a TO-39 case. Also available in chip form usingthe 3111 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/394 whichSemi
2n4150 2n5237 2n5238.pdf
NPN Power Silicon Transistor2N4150, 2N5237 & 2N5238Features Available in JAN, JANTX, and JANTXVper MIL-PRF-19500/384 TO-5 PackageMaximum RatingsRatings Symbol 2N4150 2N5237 2N5238 UnitsCollector - Emitter Voltage VCEO 70 120 170 VdcCollector - Base Voltage VCBO 100 150 200 VdcEmitter - Base Voltage VEBO 10.0 VdcCollector Current IC 4.0 AdcTotal Power Dissipation @
2n5239.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5239 DESCRIPTION With TO-3 package High breakdown voltage High power dissipation APPLICATIONS Switching regulator Inverters Power amplifiers Deflection circuits High-voltage bridge amplifiers PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-
Datasheet: 2N5227 , 2N5228 , 2N5229 , 2N522A , 2N523 , 2N5230 , 2N5231 , 2N5232 , 2SC2383Y , 2N5233 , 2N5234 , 2N5235 , 2N5236 , 2N5237 , 2N5238 , 2N5239 , 2N523A .
