TD648 Datasheet and Replacement
Type Designator: TD648
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 62.5 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO3
TD648 Substitution
TD648 Datasheet (PDF)
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Datasheet: TD367A , TD367B , TD367C , TD643 , TD644 , TD645 , TD646 , TD647 , TIP3055 , TD649 , TD650 , TEC8012 , TEC8012D , TEC8012E , TEC8012F , TEC8012G , TEC8012H .
History: 2SB1107 | 2SC2760 | TEC8012D | L9013 | SK9387 | 2SB1017Y | BD296
Keywords - TD648 transistor datasheet
TD648 cross reference
TD648 equivalent finder
TD648 lookup
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History: 2SB1107 | 2SC2760 | TEC8012D | L9013 | SK9387 | 2SB1017Y | BD296



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