TEC8012E Specs and Replacement
Type Designator: TEC8012E
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 78
Package: TO92
TEC8012E Substitution
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TEC8012E datasheet
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Detailed specifications: TD645, TD646, TD647, TD648, TD649, TD650, TEC8012, TEC8012D, BC557, TEC8012F, TEC8012G, TEC8012H, TEC8013, TEC8013D, TEC8013E, TEC8013F, TEC8013G
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