TEC8012G Specs and Replacement

Type Designator: TEC8012G

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 118

Noise Figure, dB: -

Package: TO92

 TEC8012G Substitution

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TEC8012G datasheet

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Detailed specifications: TD647, TD648, TD649, TD650, TEC8012, TEC8012D, TEC8012E, TEC8012F, 13009, TEC8012H, TEC8013, TEC8013D, TEC8013E, TEC8013F, TEC8013G, TEC8013H, TEC9011

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