All Transistors. TIP131 Datasheet

 

TIP131 Transistor. Datasheet pdf. Equivalent

Type Designator: TIP131

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 70 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Collector Capacitance (Cc): 200 pF

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO220

TIP131 Transistor Equivalent Substitute - Cross-Reference Search

TIP131 Datasheet (PDF)

1.1. tip131-137.pdf Size:39K _st2

TIP131
TIP131

TIP131/TIP132 TIP135/TIP137 ? COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP131, TIP132, TIP135 AND TIP137 ARE SGS-THOMSON PREFERRED SALESTYPES APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 2 1 DESCRIPTION The TIP131 and TIP132 are silicon epitaxial-base TO-220 NPN power transistors in monolithic Darlington configuration, mounted in Jedec TO-220 plastic packag

1.2. tip131.pdf Size:133K _inchange_semiconductor

TIP131
TIP131

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor TIP131 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 4A ·Complement to Type TIP136 APPLICATIONS ·Designed for general-purpose ampl

5.1. tip130.pdf Size:38K _st2

TIP131
TIP131

TIP130/131/132 TIP135/136/137 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n TIP131, TIP132, TIP135 AND TIP137 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP130, TIP131 and TIP132 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applica

5.2. tip130-32_tip135-37.pdf Size:150K _mospec

TIP131
TIP131

A A A

5.3. tip130-137.pdf Size:327K _cdil

TIP131
TIP131

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP130 TIP135 TIP131 TIP136 TIP132 TIP137 NPN PNP TO-220 Plastic Package Intended for use in Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL TIP130/135 TIP131/136 TIP132/137 UNIT VCEO Collector Emitter Voltage 60 80 100 V Collect

5.4. tip136.pdf Size:133K _inchange_semiconductor

TIP131
TIP131

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor TIP136 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -4A ·Complement to Type TIP131 APPLICATIONS ·Designed for general-purpose

5.5. tip137.pdf Size:133K _inchange_semiconductor

TIP131
TIP131

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor TIP137 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -4A ·Complement to Type TIP132 APPLICATIONS ·Designed for general-purpose

5.6. tip130.pdf Size:133K _inchange_semiconductor

TIP131
TIP131

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor TIP130 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 4A ·Complement to Type TIP135 APPLICATIONS ·Designed for general-purpose ampl

5.7. tip132.pdf Size:133K _inchange_semiconductor

TIP131
TIP131

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor TIP132 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 4A ·Complement to Type TIP137 APPLICATIONS ·Designed for general-purpose amp

5.8. tip135.pdf Size:133K _inchange_semiconductor

TIP131
TIP131

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor TIP135 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -4A ·Complement to Type TIP130 APPLICATIONS ·Designed for general-purpose

Datasheet: TIP117 , TIP120 , TIP121 , TIP122 , TIP125 , TIP126 , TIP127 , TIP130 , C945 , TIP132 , TIP135 , TIP136 , TIP137 , TIP140 , TIP140F , TIP140T , TIP141 .

 


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