TIP160
Datasheet, Equivalent, Cross Reference Search
Type Designator: TIP160
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50
W
Maximum Collector-Base Voltage |Vcb|: 320
V
Maximum Collector-Emitter Voltage |Vce|: 320
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 10
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package:
TO218
TIP160
Transistor Equivalent Substitute - Cross-Reference Search
TIP160
Datasheet (PDF)
..1. Size:122K inchange semiconductor
tip160 tip161 tip162.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP160/161/162 DESCRIPTION With TO-3PN package DARLINGTON 10A rated continuous collector current APPLICATIONS For use in automotive ignition,switching and motor control applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN
..2. Size:222K inchange semiconductor
tip160.pdf
isc Silicon NPN Darlington Power Transistor TIP160DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 320V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.9V(Max.)@ I = 10ACE (sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in automotive ignition, switching andmotor control applica
9.1. Size:222K inchange semiconductor
tip161.pdf
isc Silicon NPN Darlington Power Transistor TIP161DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.9V(Max.)@ I = 10ACE (sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in automotive ignition, switching andmotor control applica
Datasheet: 2N3200
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