All Transistors. TIP3055 Datasheet

 

TIP3055 Transistor. Datasheet pdf. Equivalent

Type Designator: TIP3055

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 70 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 Ā°C

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO218

TIP3055 Transistor Equivalent Substitute - Cross-Reference Search

TIP3055 Datasheet (PDF)

1.1. tip3055r.pdf Size:104K _motorola

TIP3055
TIP3055

Order this document MOTOROLA by TIP3055/D SEMICONDUCTOR TECHNICAL DATA NPN TIP3055 Complementary Silicon Power PNP TIP2955 Transistors . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20–70 @ IC = 4.0 Adc 15 AMPERE • Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc IIIIIIIIIIIIIIIIIIIIIII POWER TRANSISTO

1.2. tip2955_tip3055.pdf Size:87K _st2

TIP3055
TIP3055

TIP2955 TIP3055 Complementary power transistors Features ¦ Low collector-emitter saturation voltage ¦ Complementary NPN - PNP transistors Applications ¦ General purpose ¦ Audio Amplifier 3 2 1 Description TO-247 The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Figure 1. Internal schematic diagr

1.3. tip3055_tip2955.pdf Size:61K _onsemi

TIP3055
TIP3055

TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors Designed for general-purpose switching and amplifier applications. http://onsemi.com Features • DC Current Gain - 15 AMPERE hFE = 20 - 70 @ IC POWER TRANSISTORS = 4.0 Adc COMPLEMENTARY SILICON • Collector-Emitter Saturation Voltage - 60 VOLTS, 90 WATTS VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc • Excellent Safe

1.4. tip3055.pdf Size:82K _bourns

TIP3055
TIP3055

TIP3055 NPN SILICON POWER TRANSISTOR ? Designed for Complementary Use with the SOT-93 PACKAGE TIP2955 Series (TOP VIEW) ? 90 W at 25°C Case Temperature B 1 ? 15 A Continuous Collector Current C 2 ? Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RAT

1.5. tip2955_tip3055.pdf Size:107K _mospec

TIP3055
TIP3055

A A A

1.6. tip2955f_tip3055f.pdf Size:290K _cdil

TIP3055
TIP3055

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS TIP2955F PNP TIP3055F NPN TO- 3P Fully Isolated Plastic Package B C E Designed for General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector-Emitter Voltage VCEO 60 V Collector-Emitter Voltage VCER 70 V Collector-Bas

1.7. tip3055.pdf Size:142K _inchange_semiconductor

TIP3055
TIP3055

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ŠˇĀ¤ With TO-3PN package ŠˇĀ¤ Complement to type TIP2955 ŠˇĀ¤ 90 W at 25Ā°C case temperature ŠˇĀ¤ 15 A continuous collector current APPLICATIONS ŠˇĀ¤ Designed for generalĀ­purpose switching and amplifier applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP3

Datasheet: TIP29A , TIP29B , TIP29C , TIP29D , TIP29E , TIP29F , TIP30 , TIP3054 , BC546 , TIP30A , TIP30B , TIP30C , TIP30D , TIP30E , TIP30F , TIP31 , TIP31A .

 


TIP3055
  TIP3055
  TIP3055
  TIP3055
 
TIP3055
  TIP3055
  TIP3055
  TIP3055
 

social 

LIST

Last Update

BJT: 2SB1308-R | 2SB1308-Q | 2SB1308-P | 2SB1302T-TD-E | 2SB1302S-TD-E | 2SB1260-R | 2SB1260-Q | 2SB1260-P | 2SB1216T-TL-H | 2SB1216T-TL-E | 2SB1216T-H | 2SB1216T-E | 2SB1216S-TL-H | 2SB1216S-TL-E | 2SB1216S-H | 2SB1216S-E | 2SB1205T-TL-E | 2SB1205S-TL-E | 2SB1204T-TL-E | 2SB1204T-E |

Enter a full or partial SMD code with a minimum of 2 letters or numbers