TIP30B Datasheet and Replacement

July 2008TIP30/TIP30A/TIP30B/TIP30CPNP Epitaxial Silicon TransistorFeatures Complementary to TIP29/TIP29A/TIP29B/TIP29C1. Base 2. Collector 3. EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : TIP30 - 40 V : TIP30A - 60 V : TIP30B - 80 V : TIP30C - 100 V VCEO Collector-Emitter Voltage : TIP30 - 40

TIP29, A, B, C (NPN),TIP30, A, B, C (PNP)Complementary SiliconPlastic Power TransistorsDesigned for use in general purpose amplifier and switchingapplications. Compact TO-220 package.www.onsemi.comFeatures1 AMPERE These Devices are Pb-Free and are RoHS Compliant*POWER TRANSISTORSMAXIMUM RATINGS COMPLEMENTARY SILICONRating Symbol Value Unit 40, 60, 80, 100 VOLTS, Col

Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP30/30A/30B/30C DESCRIPTION With TO-220C package Complement to type TIP29/29A/29B/29C APPLICATIONS For use in general purpose power amplifer and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25)

isc Silicon PNP Power Transistors TIP30BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = -0.7V(Max.)@I = -1.0ACE(sat) CComplement to Type TIP29BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switching

TIP29, A, B, C (NPN),TIP30, A, B, C (PNP)Complementary SiliconPlastic Power TransistorsDesigned for use in general purpose amplifier and switchingapplications. Compact TO-220 package.www.onsemi.comFeatures1 AMPERE These Devices are Pb-Free and are RoHS Compliant*POWER TRANSISTORSMAXIMUM RATINGS COMPLEMENTARY SILICONRating Symbol Value Unit 40, 60, 80, 100 VOLTS, Col

Order this documentMOTOROLAby TIP3055/DSEMICONDUCTOR TECHNICAL DATANPNTIP3055Complementary Silicon PowerPNPTIP2955Transistors. . . designed for generalpurpose switching and amplifier applications. DC Current Gain hFE = 2070 @ IC = 4.0 Adc15 AMPERE CollectorEmitter Saturation Voltage VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc

TIP2955TIP3055Complementary power transistorsFeatures Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose Audio Amplifier321DescriptionTO-247The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications.Figure 1. Internal sche

TIP29A/29CTIP30A/30CCOMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The TIP29A and TIP29C are siliconEpitaxial-Base NPN power transistors mounted inJedec TO-220 plastic package. They are intentedfor use in medium power linear and switching32applications.1The complementary PNP types ar

TIP30 SERIES(TIP30/30A/30B/30C) PNP EPITAXIAL SILICON TRANSISTORMEDIUM POWER LINEARTO-220SWITCHING APPLICATIONS Complement to TIP29/29A/29B/29CABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Emitter Voltage : TIP30 VCBO - 40 V : TIP30A - 60 V : TIP30B - 80 V : TIP30C - 100 V Collector Emitter Voltage : TIP30 VCEO - 40 V : TIP30A - 60 V : TIP30B

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MCCMicro Commercial ComponentsTM TIP29,A,B,C(NPN)20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311TIP30,A,B,C(PNP)Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates 1.0 AmpRoHS Compliant. See ordering information) Complementary Marking: Type Number Rth(jc) is 4.167OC/W, Rth(ja) i

TIP29, A, B, C (NPN),TIP30, A, B, C (PNP)Complementary SiliconPlastic Power TransistorsDesigned for use in general purpose amplifier and switchingapplications. Compact TO-220 AB package.http://onsemi.comFeatures1 AMPERE Pb-Free Packages are Available*POWER TRANSISTORSCOMPLEMENTARY SILICON40, 60, 80, 100 VOLTS, 80 WATTSMARKINGDIAGRAM4TO-220ABTIPxxxGCASE 2

TIP3055 (NPN),TIP2955 (PNP)Complementary SiliconPower TransistorsDesigned for general-purpose switching and amplifier applications.http://onsemi.comFeatures DC Current Gain - 15 AMPEREhFE = 20 - 70 @ IC POWER TRANSISTORS= 4.0 AdcCOMPLEMENTARY SILICON Collector-Emitter Saturation Voltage - 60 VOLTS, 90 WATTSVCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excell

TIP3055NPN SILICON POWER TRANSISTOR Designed for Complementary Use with the SOT-93 PACKAGETIP2955 Series (TOP VIEW) 90 W at 25C Case TemperatureB1 15 A Continuous Collector CurrentC 2 Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute maximum ratings at 25C case temperature (unless otherwis

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPLASTIC POWER TRANSISTORS TIP29, A, B, C NPNTIP30, A, B, C PNPTO-220Plastic PackageComplementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi AmplifiersABSOLUTE MAXIMUM RATINGS (Ta=25

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPOWER TRANSISTORS TIP2955F PNPTIP3055F NPNTO- 3P Fully IsolatedPlastic PackageBCEDesigned for General Purpose Switching and Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector-Emitter Voltage VCEO 60 VCollector-Emitter Voltage VCER 70 VCollector-

TIP3055Silicon NPN Power TransistorsDESCRIPTION With TO-247 package Complement to type TIP2955 90 W at 25C case temperature 15 A continuous collector current APPLICATIONS Designed for generalpurpose switching and amplifier applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol

INCHANGE Semiconductorisc Silicon NPN Power Transistor TIP3055DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CComplement to Type TIP2955Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose

isc Silicon PNP Power Transistors TIP30ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = -0.7V(Max.)@I = -1.0ACE(sat) CComplement to Type TIP29AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switching

isc Silicon NPN Power Transistor TIP3055TDESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 0.8V(Max)@ I = 4ACE(sat CComplement to Type TIP2955TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifier

isc Silicon PNP Power Transistors TIP30DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -40V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = -0.7V(Max.)@I = -1.0ACE(sat) CComplement to Type TIP29Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingap

isc Silicon PNP Power Transistors TIP30CDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = -0.7V(Max.)@I = -1.0ACE(sat) CComplement to Type TIP29CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switching