TIP31B Datasheet and Replacement

July 2008TIP31/TIP31A/TIP31B/TIP31CNPN Epitaxial Silicon TransistorFeatures Complementary to TIP32/TIP32A/TIP32B/TIP32C1. Base 2. Collector 3. EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : TIP31 40 V : TIP31A 60 V : TIP31B 80 V : TIP31C 100 V VCEO Collector-Emitter Voltage : TIP31 40 V : TIP

MCCTMMicro Commercial ComponentsTIP31/31A/31B/31C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Silicon NPN The complementary PNP types are the TIP32 respectively Epoxy meets UL 94 V-0

TIP31/31A/31B/31C TO-220 Transistor (NPN)TO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Medium Power Linear Switching Applications Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP31 TIP31A TIP31B TIP31C Units VCBO Collector-Base Voltage 40 60 80 100 V VCEO Collector-Emitter Voltage 40 60 80 100 V

Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP31/31A/31B/31C DESCRIPTION With TO-220C package Complement to type TIP32/32A/32B/32C APPLICATIONS Medium power linear switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIO

TIP31G, TIP31AG, TIP31BG,TIP31CG (NPN),TIP32G, TIP32AG, TIP32BG,TIP32CG (PNP)Complementary Siliconwww.onsemi.comPlastic Power Transistors3 AMPEREDesigned for use in general purpose amplifier and switchingapplications.POWER TRANSISTORSCOMPLEMENTARY SILICONFeatures40-60-80-100 VOLTS, High Current Gain - Bandwidth Product40 WATTS Compact TO-220 Package Th

Order this documentMOTOROLAby TIP31A/DSEMICONDUCTOR TECHNICAL DATANPNTIP31AComplementary Silicon PlasticTIP31B*Power TransistorsTIP31C*. . . designed for use in general purpose amplifier and switching applications.PNP CollectorEmitter Saturation Voltage VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 AdcTIP32A CollectorEmitter Sustaining Voltage VCEO(sus) =

TIP31CPower transistorsGeneral features New enhanced series High switching speed hFE improved linearity hFE Grouping32Applications1 Linear and switching industrial applicationTO-220DescriptionThe TIP31C is a base island technology NPN power transistor in TO-220 plastic package with Internal schematic diagrambetter performances than the industry s

TIP31A/31CTIP32A/32B/32CCOMPLEMENTARY SILICON POWERTRANSISTORS SGS-THOMSON PREFERRED SALESTYPESAPPLICATION LINEAR AND SWITCHING INDUSTRIALEQUIPMENT321DESCRIPTIONThe TIP31A and TIP31C are siliconepitaxial-base NPN transistors in Jedec TO-220 TO-220plastic package, intented for use in mediumpower linear and switching applications.TIP32B is PNP power transistor.The

TIP31APower transistorsGeneral features New enhanced series High switching speed hFE improved linearityApplications321 Linear and switching industrial applicationTO-220DescriptionThe TIP31A is a base island technology NPN power transistor in TO-220 plastic package with better performances than the industry standard TIP31A that make this device suitabl

TIP31A/31CTIP32A/32B/32C COMPLEMENTARY SILICON POWERTRANSISTORSAPPLICATION LINEAR AND SWITCHING INDUSTRIALEQUIPMENTDESCRIPTIONThe TIP31A and TIP31C are siliconEpitaxial-Base NPN transistors mounted inJedec TO-220 plastic package. They are intented3for use in medium power linear and switching 21applications.The complementary PNP types are TIP32A andTO-220TI

TIP31CPower transistorsGeneral features New enhanced series High switching speed hFE improved linearity hFE Grouping32Applications1 Linear and switching industrial applicationTO-220DescriptionThe TIP31C is a base island technology NPN power transistor in TO-220 plastic package with Internal schematic diagrambetter performances than the industry s

TIP31A/31B/31CTIP32A/32B/32CCOMPLEMENTARY SILICON POWERTRANSISTORSn TIP31A, TIP31C, TIP32A,TIP32B, ANDTIP32C ARE SGS-THOMSON PREFERREDSALESTYPESDESCRIPTIONThe TIP31A, TIP31B and TIP31C are siliconepitaxial-base NPN power transistors in JedecTO-220 plastic package, intented for use inmedium power linear and switching applications.32The complementary PNP types are TIP3

TIP31 Series(TIP31/31A/31B/31C)Medium Power Linear Switching Applications Complementary to TIP32/32A/32B/32CTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : TIP31 40 V : TIP31A 60 V : TIP31B 80 V : TIP31C 100 V VCEO Collector-Emitter V

MCCTMMicro Commercial ComponentsTIP31/A/B/C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features TO-220 packageSilicon NPN The complementary PNP types are the TIP32 respectively Case Material: Molded Plastic. ULFlammabilityPower TransistorsClassification Rating 94V-0 Marking : Part Number

TIP31, TIP31A, TIP31B,TIP31C, (NPN), TIP32,TIP32A, TIP32B, TIP32C,(PNP)Complementary Siliconhttp://onsemi.comPlastic Power TransistorsDesigned for use in general purpose amplifier and switching3 AMPEREapplications.POWER TRANSISTORSFeatures Collector-Emitter Saturation Voltage - COMPLEMENTARY SILICONVCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc40-60-80-100 VOLTS, Co

UNISONIC TECHNOLOGIES CO., LTD TIP31C NPN EXPITAXIAL TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP31C is a NPN epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. FEATURES * Complement to TIP32C. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3

TIP31, TIP31A, TIP31B, TIP31CNPN SILICON POWER TRANSISTORS Designed for Complementary Use with the TIP32 SeriesTO-220 PACKAGE(TOP VIEW) 40 W at 25C Case Temperature 3 A Continuous Collector CurrentB 1 5 A Peak Collector CurrentC 2 Customer-Specified Selections Available 3EPin 2 is in electrical contact with the mounting base.MDTRACAabsolute maximum

TIP31 / TIP31A / TIP31B / TIP31C NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-220J Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise specified) Ratings Parameter Symbol Unit TIP31 TIP31A TIP31B TIP31C Collector - Base Volta

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPLASTIC POWER TRANSISTORS TIP31, A, B, C NPNTIP32, A, B, C PNPTO-220Plastic PackageComplementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi AmplifiersABSOLUTE MAXIMUM RATINGS (Ta=25

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate TransistorsTO-220-3L TIP31C TRANSISTOR (NPN)1. BASE2. COLLECTORFEATURES3. EMITTER Medium Power Linear Switching Applications Equivalent Circuit TIP31C=Device code Solid dot=Green moldinn compound device, if none,the normal deviceXXXX=CodeTIP31CXXXXMAXIMUM RATINGS (Ta=25

SEMICONDUCTOR TIP31CTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORGENERAL PURPOSE APPLICATION.ARFEATURES S Complementary to TIP32C.PDDIM MILLIMETERSA 10.30 MAXB 15.30 MAXC 0.80MAXIMUM RATING (Ta=25 ) _+D 3.60 0.20TE 3.00CHARACTERISTIC SYMBOL RATING UNIT F 6.70 MAX_G 13.60 + 0.50LH 5.60 MAXVCBOCollector-Base Voltage 100 VC CJ 1.37 MAXK 0.50

SEMICONDUCTOR TIP31CFTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORGENERAL PURPOSE APPLICATION.ACFEATURESDIM MILLIMETERSS_Complementary to TIP32CF. A 10.0 + 0.3_+B 15.0 0.3EC _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +MAXIMUM RATING (Ta=25 ) 0.5+0.1/-0.05H_+J 13.6 0.5L LRK _3.7 0.2CHARACTERISTIC SYMBOL RA

NPN NPN Epitaxial Silicon Transistor RTIP31C APPLICATIONS Medium Power Linear Switching Applications FEATURES V =100V (min) High collector voltageV =100V (min) CEO CEO TIP32C Complementary to TIP32C RoHS RoHS prod

Spec. No. : C609J3 Issued Date : 2014.06.06CYStech Electronics Corp.Revised Date : Page No. : 1/6 3A NPN Epitaxial Planar Power Transistor TIP31CJ3 Description TIP31CJ3 is designed for use in general purpose amplifier and switching applications. Features Low collector-emitter saturation voltage, VCE(sat) = 0.5V(max) @ IC = 3A High collector-emitter sustaining volta

Spec. No. : C609E3 Issued Date : 2003.09.04 CYStech Electronics Corp. Revised Date : Page No. : 1/4 3A NPN Epitaxial Planar Power Transistor TIP31CE3 Description TIP31CE3 is designed for use in general purpose amplifier and switching applications. Features Low collector-emitter saturation voltage, VCE(sat) = 1.2V(max) @ IC = 3A High collector-emitter sustaining vo

ST TIP31C NPN Silicon Epitaxial Planar Transistor for power switching and amplifier applications TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCEO 100 VEmitter Base Voltage VEBO 5 VCollector Current IC 3 ACollector Current (Pulse) ICP 5 ABase Current IB 1 AOPower Diss

SEMICONDUCTORTIP31TECHNICAL DATA TRANSISTOR (NPN) TIP31/31A/31B/31CAOCFE FEATURESBDIM MILLIMETERSMedium Power Linear Switching Applications A 10.15 0.15 B 15.30 MAXC 1.3+0.1/-0.15PD 0.8 0.1E 3.8 0.2F 2.7 0.2JH 0.4 0.15DJ 13.6 0.2N 2.54 0.2HN NMAXIMUM RATINGS (Ta=25 unless otherwise noted) O 4.5 0.21 2 3P 2

TRANSISTOR TIP31CA MAIN CHARACTERISTICS FEATURES IC 3A Epitaxial silicon VCEO 70V High switching speed VCBO 100V RoHS RoHS product PC 30W APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency powe

TIP31CSilicon NPN Epitaxial TransistorTIP31CTIP31C, the base island technology NPN power transistor, make thisdevice suitable for audio,power linear and switching applications.Thecomplementary PNP type is TIP32CFeatures Complementary PNP-NPN devices h groupingFE h improved linearityFE RoHS productApplications General purpose circuits Audio amplifi

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP31F DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= 1A Collector-Emitter Breakdown Voltage- : V(BR) CEO= 160V(Min) Complement to Type TIP32F APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER

isc Silicon NPN Power Transistors TIP31DDESCRIPTIONDC Current Gain -h = 25(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR) CEOComplement to Type TIP32DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATI

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP31E DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= 1A Collector-Emitter Breakdown Voltage- : V(BR) CEO= 140V(Min) Complement to Type TIP32E APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER