2N5263 Specs and Replacement
Type Designator: 2N5263
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 1000 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO122
2N5263 Substitution
- BJT ⓘ Cross-Reference Search
2N5263 datasheet
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5264 DESCRIPTION With TO-3 package High speed switching High reliability APPLICATIONS Switching regulators DC-DC convertor Solid state relay General purpose power amplifiers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol MA... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5264 DESCRIPTION With TO-3 package High speed switching High reliability APPLICATIONS Switching regulators DC-DC convertor Solid state relay General purpose power amplifiers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Coll... See More ⇒
Detailed specifications: 2N5254-78, 2N5255, 2N5255-78, 2N5256, 2N5256-78, 2N525A, 2N526, 2N5262, MPSA42, 2N5264, 2N526A, 2N527, 2N5271, 2N5272, 2N5276, 2N5279, 2N527A
Keywords - 2N5263 pdf specs
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