TIP41B Datasheet and Replacement

TIP41A/41B/41CTIP42A/42B/42CCOMPLEMENTARY SILICON POWERTRANSISTORSn SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe TIP41A, TIP41B and TIP41C are siliconepitaxial-base NPN power transistors in JedecTO-220 plastic package, intented for use inmedium power linear and switching applications.The complementary PNP types are TIP42A,TIP42B and TIP42C.321TO-220INTERNAL SCH

July 2008TIP41/TIP41A/TIP41B/TIP41CNPN Epitaxial Silicon TransistorFeatures Complementary to TIP42/TIP42A/TIP42B/TIP42C1. Base 2. Collector 3. EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Emitter Voltage: TIP41 40 V : TIP41A 60 V : TIP41B 80 V : TIP41C 100 V VCEO Collector-Emitter Voltage: TIP41 40 V : TI

MCCMicro Commercial ComponentsTMTIP41/41A/41B/41C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Silicon NPN The complementary PNP types are the TIP42 respectively Epoxy meets UL 94 V-0

TIP41, TIP41A, TIP41B,TIP41C (NPN); TIP42, TIP42A,TIP42B, TIP42C (PNP)Complementary SiliconPlastic Power Transistorshttp://onsemi.comDesigned for use in general purpose amplifier and switchingapplications.6 AMPEREFeaturesCOMPLEMENTARY SILICON ESD Ratings: Machine Model, C; > 400 VPOWER TRANSISTORSHuman Body Model, 3B; > 8000 V40-60-80-100 VOLTS, Epoxy Meets U

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate TransistorsTIP41/41A/41B/41C TRANSISTOR (NPN)TO-220-3L FEA TURES1. BASE Medium Power Linear Switching Applications 2. COLLECTOR3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter TIP41 TIP41A TIP41B TIP41C Unit VCBO Collector-Base Voltage 40 60 80 100 V VCEO Collecto

TIP41/41A/41B/41C TO-220 Transistor (NPN)TO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Medium Power Linear Switching Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter TIP41 TIP41A TIP41B TIP41C Units VCBO Collector-Base Voltage 40 60 80 100 V VCEO Collector-Emitter Voltage 40 60 80 100 V

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO. LTD TO-220 Plastic-Encapsulate Transistors TO-220 TIP41A/41B/41C TRANSISTOR (NPN) 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 2 W (Tamb=25) 3. EMITTER Collector current ICM: 6 A 1 2 3 Collector-base voltage V(BR)CBO: TIP41A : 60 V TIP41B : 80 V TIP41C : 100 V Operating and storage junction te

TIP41/41A/41B/41CSilicon NPN Power TransistorsDESCRIPTIONDC Current Gain -h = 30(Min)@ I = -0.3AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- TIP41; 60V(Min)- TIP41ACEO(SUS)80V(Min)- TIP41B; 100V(Min)- TIP41CComplement to Type TIP42/42A/42B/42CAPPLICATIONSDesigned for use in general purpose amplifer andswitching applicationsABSOLUTE MAXIMUM RATINGS(T

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors TIP41/41A/41B/41CDESCRIPTIONDC Current Gain -h = 30(Min)@ I = -0.3AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- TIP41; 60V(Min)- TIP41ACEO(SUS)80V(Min)- TIP41B; 100V(Min)- TIP41CComplement to Type TIP42/42A/42B/42CAPPLICATIONSDesigned for use in general purpose amplifer andswitching appl

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP41/41A/41B/41C DESCRIPTIONDC Current Gain -hFE = 30(Min)@ IC= 0.3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- TIP41; 60V(Min)- TIP41A 80V(Min)- TIP41B; 100V(Min)- TIP41C Complement to Type TIP42/42A/42B/42C APPLICATIONS Designed for use in general purpose amplifer

TIP41G, TIP41AG, TIP41BG,TIP41CG (NPN),TIP42G, TIP42AG, TIP42BG,TIP42CG (PNP)Complementary Siliconwww.onsemi.comPlastic Power Transistors6 AMPEREDesigned for use in general purpose amplifier and switchingapplications.COMPLEMENTARY SILICONPOWER TRANSISTORSFeatures Epoxy Meets UL 94 V-0 @ 0.125 in 40-60-80-100 VOLTS, These Devices are Pb-Free and are RoHS Complia

Order this documentMOTOROLAby TIP41A/DSEMICONDUCTOR TECHNICAL DATANPNTIP41AComplementary Silicon PlasticTIP41B*Power TransistorsTIP41C*. . . designed for use in general purpose amplifier and switching applications.PNP CollectorEmitter Saturation Voltage VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 AdcTIP42A CollectorEmitter Sustaining Voltage VCEO(sus) =

TIP41ATIP42ACOMPLEMENTARY SILICON POWER TRANSISTORFeatures COMPLEMENTARY PNP-NPN DEVICES NEW ENHANCED SERIES HIGH SWITCHING SPEED hFE IMPROVED LINEARITY32Applications1 GENERAL PURPOSE CIRCUITSTO-220 AUDIO AMPLIFIER POWER LINEAR AND SWITCHINGDescriptionInternal Schematic DiagramThe TIP41A is a silicon base island technologyNPN power tran

TIP41CTIP42CComplementary power transistors .Features Complementary PNP-NPN devices New enhanced series High switching speed hFE grouping hFE improved linearity321ApplicationsTO-220 General purpose circuits Audio amplifierFigure 1. Internal schematic diagram Power linear and switchingDescriptionThe TIP41C is a base island technolog

TIP41A/41B/41CTIP42A/42B/42CCOMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPESDESCRIPTION The TIP41A, TIP41B and TIP41C are siliconepitaxial-base NPN power transistors in JedecTO-220 plastic package, intented for use inmedium power linear and switching applications.The complementary PNP types are TIP42A,TIP42B and TIP42C.321TO-220INTERNAL SC

TIP41CTIP42CComplementary power transistors .Features Complementary PNP-NPN devices New enhanced series High switching speed hFE grouping hFE improved linearity321ApplicationsTO-220 General purpose circuits Audio amplifierFigure 1. Internal schematic diagram Power linear and switchingDescriptionThe TIP41C is a base island technolog

TIP41 Series(TIP41/41A/41B/41C)Medium Power Linear Switching Applications Complement to TIP42/42A/42B/42CTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Emitter Voltage: TIP41 40 V : TIP41A 60 V : TIP41B 80 V : TIP41C 100 V VCEO Collector-Emitter Vo

TIP41 SERIES(TIP41/41A/41B/41C) NPN EPITAXIAL SILICON TRANSISTORMEDIUM POWER LINEARTO-220SWITCHING APPLICATIONS Complement to TIP42/42A/42B/42CABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Emitter Voltage : TIP41 VCBO 40 V: TIP41A 60 V: TIP41B 80 V: TIP41C 100 V Collector Emitter Voltage : TIP41 VCEO 40 V: TIP41A 60 V: TIP41B 80 V1.Base 2.C

TIP41TIP41ATIP41Bwww.centralsemi.comTIP41CDESCRIPTION:NPN SILICONThe CENTRAL SEMICONDUCTOR TIP41 SERIESPOWER TRANSISTORtypes are NPN Epitaxial-Base Silicon Power Transistors designed for power amplifier and high speed switching applications.MARKING: FULL PART NUMBERTO-220 CASEMAXIMUM RATINGS: (TC=25C) SYMBOL TIP41 TIP41A TIP41B TIP41C UNITSCollector-Base Voltage

UNISONIC TECHNOLOGIES CO., LTD TIP41C NPN PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP41C is a NPN expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. FEATURE * Complement to TIP42C SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Ha

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPLASTIC POWER TRANSISTORS TIP41, A, B, C NPNTIP42, A, B, C PNPTO-220Plastic PackageComplementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi AmplifiersABSOLUTE MAXIMUM RATINGS (Ta=25

SEMICONDUCTOR TIP41CFTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.ACFEATURESDIM MILLIMETERSSComplementary to TIP42CF._A 10.0 + 0.3_+B 15.0 0.3EC _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +MAXIMUM RATING (Ta=25 )H 0.5+0.1/-0.05_+J 13.6 0.5L LCHARACTERISTIC SYMBOL RATING UNIT RK

SEMICONDUCTOR TIP41CTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.ARFEATURESS Complementary to TIP42C.PDDIM MILLIMETERSA 10.30 MAXB 15.30 MAXC 0.80MAXIMUM RATING (Ta=25 )_+D 3.60 0.20TE 3.00CHARACTERISTIC SYMBOL RATING UNITF 6.70 MAX_G 13.60 + 0.50VCBO LCollector-Base Voltage 100 VH 5.60 MAXC CJ 1.37 MAXVCE

TIP41 SeriesNPN Silicon Power TransistorP b Lead(Pb)-FreeCOLLECTOR21BASE2 FEATURES:31* Medium Power Linear Switching Applications 1. BASE2. COLLECTOR3. EMITTER3TO-220EMITTERMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter TIP41 TIP41A TIP41B TIP41C Units VCBO Collector-Base Voltage 60 V 40 80100VCEO Collector-Emitter Voltage 100 V

Spec. No. : HE6707HI-SINCERITYIssued Date : 1993.01.13Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/4HTIP41CNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HTIP41C is designed for use in general purpose amplifier and switchingapplications.TO-220Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature .................................

NPN NPN Epitaxial Silicon Transistor RTIP41C APPLICATIONS Medium Power Linear Switching Applications FEATURES V =100V (min) High collector voltageV =100V (min) CEO CEO TIP42C Complementary to TIP42C RoHS RoHS prod

TIP41 Rev. G Nov.-2017 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features TIP42 Complement to TIP42. / Applications Medium power linear switching applications. / Equivalent Circuit / P

TIP41P(3DA41P) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power linear switching applications. : TIP42P(3CA42P) Features: Complement to TIP42P(3CA42P). /Absolute maximum ratings(Ta=25) Symbo Rating Unit 100 V VCBO 100 V V CEOV 5 VEBOI 6 ACI

TIP41C NPN Silicon Epitaxial Planar Transistor for power switching and amplifier applications TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit100 VCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCEO 5 VEmitter Base Voltage VEBO 6 ACollector Current IC 10 ACollector Current (Pulse) ICP 2 ABase Current IB O

SEMICONDUCTORTIP41/41A/41B/41C TECHNICAL DATAAOCFE TIP41/41A/41B/41C TRANSISTOR (NPN) BDIM MILLIMETERS A 10.15 0.15 FEATURES B 15.30 MAX C 1.3 0.1/-0.15PD 0.8 0.1 Medium Power Linear Switching Applications E 3.8 0.2F 2.7 0.2JH 0.4 0.15D J 13.6 0.2H N 2.54 0.2N N O 4.5 0.21 2 3 P 2.7 0.21 BASE2 COLLECTOR3 EMITTER

SMD Type TransistorsNPN TransistorsTIP41 Series (KIP41 Series)TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.2 Features5.30-0.2 +0.80.50 -0.7 Medium Power Linear Switching Applications Complement to TIP42/42A/42B/42C0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25

TRANSISTOR TIP41CA MAIN CHARACTERISTICS FEATURES IC 6A Epitaxial silicon VCEO 100V High switching speed PC 65W Complementary to TIP42CA TIP42CA APPLICATIONS RoHS RoHS product Medium Power Linear Switching Applications Pa

TIP41(3DA41) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power linear switching applications. : TIP42(3CA42) Features: Complement to TIP42(3CA42). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol Rating UnitTIP41 40 V 5.0

TIP41NPN / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. PIN1Base / Features TIP42 PIN 2Collector 1 2 3 Complement to TIP42. PIN 3Emitter / Applications Medium power linear switching applications.

TIP41CSilicon NPN Epitaxial TransistorTIP41CTIP41C, the base island technology NPN power transistor, make thisdevice suitable for audio,power linear and switching applications.Thecomplementary PNP type is TIP42CFeatures Complementary PNP-NPN devices h groupingFE h improved linearityFE RoHS productApplications General purpose circuits Audio amplifi

N P N S I L I C O N T R A N S I S T O RTIP41C T =25aTO-220T -55~150stgT 150jP =25T 65WC

isc Silicon NPN Power Transistors TIP41DESCRIPTIONDC Current Gain -h = 30(Min)@ I = 0.3AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)CEO(SUS)Complement to Type TIP42Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifer and switchingapplicationsABSOLUTE MAXIMUM RATING

isc Silicon NPN Power Transistors TIP41CDESCRIPTIONDC Current Gain -h = 30(Min)@ I = 0.3AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type TIP42CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifer and switchingapplicationsABSOLUTE MAXIMUM RAT

isc Silicon NPN Power Transistors TIP41DDESCRIPTIONDC Current Gain -h = 30(Min)@ I = 0.3AFE CCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)Complement to Type TIP42DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifer and switchingapplicationsABSOLUTE MAXIMUM RAT

Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP41D/41E/41F DESCRIPTION With TO-220C package Complement to type TIP42D/42E/42F APPLICATIONS For medium power linear switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS

isc Silicon NPN Power Transistors TIP41EDESCRIPTIONDC Current Gain -h = 30(Min)@ I = 0.3AFE CCollector-Emitter Sustaining Voltage-: V = 140V(Min)CEO(SUS)Complement to Type TIP42EMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifer and switchingapplicationsABSOLUTE MAXIMUM RAT