TIP529 Datasheet, Equivalent, Cross Reference Search
Type Designator: TIP529
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 115 W
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO61
TIP529 Transistor Equivalent Substitute - Cross-Reference Search
TIP529 Datasheet (PDF)
9.2. Size:218K inchange semiconductor
tip52.pdf
tip52.pdf
isc Silicon NPN Power Transistors TIP52DESCRIPTIONDC Current Gain -h = 30~150@ I = 0.3AFE CCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated audio output amplifier,and switchingpower supply drivers applications.ABSOLUTE MAXIMUM RATINGS
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
