TIP560 Datasheet. Specs and Replacement

Type Designator: TIP560  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 7.5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 6

Noise Figure, dB: -

Package: TO3

 TIP560 Substitution

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TIP560 datasheet

 9.1. Size:79K  inchange semiconductor

 tip562 tip563 .pdf pdf_icon

TIP560

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP562/563 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 300V(Min)- TIP562 = 400V(Min)- TIP563 High Power Dissipation APPLICATIONS Designed for converters, inverters, pulse-width-modulated regulators, and a variety of power switching applications. ABSOLUTE MAXIMUM RA... See More ⇒

 9.2. Size:210K  inchange semiconductor

 tip562 tip563.pdf pdf_icon

TIP560

isc Silicon NPN Power Transistors TIP562/563 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 300V(Min)- TIP562 CEO(SUS) = 400V(Min)- TIP563 High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for converters, inverters, pulse-width-modulated regulators, and a variety of power switching applica... See More ⇒

Detailed specifications: TIP55, TIP554, TIP555, TIP556, TIP558, TIP559, TIP55A, TIP56, D209L, TIP561, TIP562, TIP563, TIP56A, TIP57, TIP57A, TIP58, TIP58A

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