All Transistors. TIP561 Datasheet

 

TIP561 Datasheet and Replacement


   Type Designator: TIP561
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 6
   Noise Figure, dB: -
   Package: TO3
 
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TIP561 Datasheet (PDF)

 9.1. Size:79K  inchange semiconductor
 tip562 tip563 .pdf pdf_icon

TIP561

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP562/563 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- TIP562 = 400V(Min)- TIP563 High Power Dissipation APPLICATIONSDesigned for converters, inverters, pulse-width-modulated regulators, and a variety of power switching applications. ABSOLUTE MAXIMUM RA

 9.2. Size:210K  inchange semiconductor
 tip562 tip563.pdf pdf_icon

TIP561

isc Silicon NPN Power Transistors TIP562/563DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 300V(Min)- TIP562CEO(SUS)= 400V(Min)- TIP563High Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for converters, inverters, pulse-width-modulatedregulators, and a variety of power switching applica

Datasheet: TIP554 , TIP555 , TIP556 , TIP558 , TIP559 , TIP55A , TIP56 , TIP560 , D880 , TIP562 , TIP563 , TIP56A , TIP57 , TIP57A , TIP58 , TIP58A , TIP600 .

History: HMBT6517

Keywords - TIP561 transistor datasheet

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