TIP561
Datasheet, Equivalent, Cross Reference Search
Type Designator: TIP561
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100
W
Maximum Collector-Emitter Voltage |Vce|: 400
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 7.5
A
Max. Operating Junction Temperature (Tj): 200
°C
Forward Current Transfer Ratio (hFE), MIN: 6
Noise Figure, dB: -
Package:
TO3
TIP561
Transistor Equivalent Substitute - Cross-Reference Search
TIP561
Datasheet (PDF)
9.1. Size:79K inchange semiconductor
tip562 tip563 .pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP562/563 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- TIP562 = 400V(Min)- TIP563 High Power Dissipation APPLICATIONSDesigned for converters, inverters, pulse-width-modulated regulators, and a variety of power switching applications. ABSOLUTE MAXIMUM RA
9.2. Size:210K inchange semiconductor
tip562 tip563.pdf
isc Silicon NPN Power Transistors TIP562/563DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 300V(Min)- TIP562CEO(SUS)= 400V(Min)- TIP563High Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for converters, inverters, pulse-width-modulatedregulators, and a variety of power switching applica
Datasheet: 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
