All Transistors. TIP561 Datasheet

 

TIP561 Datasheet and Replacement


   Type Designator: TIP561
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 6
   Noise Figure, dB: -
   Package: TO3
 

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TIP561 Datasheet (PDF)

 9.1. Size:79K  inchange semiconductor
 tip562 tip563 .pdf pdf_icon

TIP561

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP562/563 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- TIP562 = 400V(Min)- TIP563 High Power Dissipation APPLICATIONSDesigned for converters, inverters, pulse-width-modulated regulators, and a variety of power switching applications. ABSOLUTE MAXIMUM RA

 9.2. Size:210K  inchange semiconductor
 tip562 tip563.pdf pdf_icon

TIP561

isc Silicon NPN Power Transistors TIP562/563DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 300V(Min)- TIP562CEO(SUS)= 400V(Min)- TIP563High Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for converters, inverters, pulse-width-modulatedregulators, and a variety of power switching applica

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: MMBT918LT1G

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