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TIP561 Specs and Replacement


   Type Designator: TIP561
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 6
   Noise Figure, dB: -
   Package: TO3

 TIP561 Transistor Equivalent Substitute - Cross-Reference Search

   

TIP561 detailed specifications

 9.1. Size:79K  inchange semiconductor
 tip562 tip563 .pdf pdf_icon

TIP561

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP562/563 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 300V(Min)- TIP562 = 400V(Min)- TIP563 High Power Dissipation APPLICATIONS Designed for converters, inverters, pulse-width-modulated regulators, and a variety of power switching applications. ABSOLUTE MAXIMUM RA... See More ⇒

 9.2. Size:210K  inchange semiconductor
 tip562 tip563.pdf pdf_icon

TIP561

isc Silicon NPN Power Transistors TIP562/563 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 300V(Min)- TIP562 CEO(SUS) = 400V(Min)- TIP563 High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for converters, inverters, pulse-width-modulated regulators, and a variety of power switching applica... See More ⇒

Detailed specifications: TIP554 , TIP555 , TIP556 , TIP558 , TIP559 , TIP55A , TIP56 , TIP560 , 2N4401 , TIP562 , TIP563 , TIP56A , TIP57 , TIP57A , TIP58 , TIP58A , TIP600 .

Keywords - TIP561 transistor specs

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