TIP562 Datasheet. Specs and Replacement
Type Designator: TIP562 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 8
Package: TO3
TIP562 Substitution
- BJT ⓘ Cross-Reference Search
TIP562 datasheet
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP562/563 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 300V(Min)- TIP562 = 400V(Min)- TIP563 High Power Dissipation APPLICATIONS Designed for converters, inverters, pulse-width-modulated regulators, and a variety of power switching applications. ABSOLUTE MAXIMUM RA... See More ⇒
isc Silicon NPN Power Transistors TIP562/563 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 300V(Min)- TIP562 CEO(SUS) = 400V(Min)- TIP563 High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for converters, inverters, pulse-width-modulated regulators, and a variety of power switching applica... See More ⇒
Detailed specifications: TIP555, TIP556, TIP558, TIP559, TIP55A, TIP56, TIP560, TIP561, 2222A, TIP563, TIP56A, TIP57, TIP57A, TIP58, TIP58A, TIP600, TIP601
Keywords - TIP562 pdf specs
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