All Transistors. TIPP31B Datasheet

 

TIPP31B Datasheet and Replacement


   Type Designator: TIPP31B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO92
 
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TIPP31B Datasheet (PDF)

 ..1. Size:72K  bourns
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TIPP31B

TIPP31, TIPP31A, TIPP31B, TIPP31CNPN SILICON POWER TRANSISTORS 20 W Pulsed Power Dissipation 100 V CapabilityLP PACKAGE(TOP VIEW) 2 A Continuous Collector CurrentE1 4 A Peak Collector Current2C3B Customer-Specified Selections AvailableMDTRABabsolute maximum ratings at 25C case temperature (unless otherwise noted)RATING SYMBOL VALUE UNITTIPP31

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

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