TIS06 Datasheet and Replacement

   Type Designator: TIS06
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 140 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Transition Frequency (ft): 40 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: X21
      - BJT Cross-Reference Search