TIS93M Datasheet and Replacement
Type Designator: TIS93M
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: X10
- BJT Cross-Reference Search
TIS93M Datasheet (PDF)
tis93.pdf

TIS93PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500mA.TO-9211. Collector 2. Base 3. EmitterAbsolute Maximum Ratings* TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -40 VVCBO Collector-Base Voltage -40 VVEBO Emitter-Base Voltage -5.0 V
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SC5814 | 2SB1188SQ-R | FTC2655 | DTA144WET1G | MMDT5401 | 3DF5 | MP249
Keywords - TIS93M transistor datasheet
TIS93M cross reference
TIS93M equivalent finder
TIS93M lookup
TIS93M substitution
TIS93M replacement
History: 2SC5814 | 2SB1188SQ-R | FTC2655 | DTA144WET1G | MMDT5401 | 3DF5 | MP249



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
bd139 transistor | irf840 datasheet | ge10001 | irf830 | irfp450 | mj21193 | s9014 transistor | bc547 transistor datasheet