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TIXP39 Specs and Replacement

   Type Designator: TIXP39
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings

   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

   Transition Frequency (ft): 120 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO59
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