TK200A
Datasheet, Equivalent, Cross Reference Search
Type Designator: TK200A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2.5
W
Maximum Collector-Base Voltage |Vcb|: 60
V
Maximum Collector-Emitter Voltage |Vce|: 20
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 1.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 50
MHz
Collector Capacitance (Cc): 48
pF
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package:
TO3
TK200A
Transistor Equivalent Substitute - Cross-Reference Search
TK200A
Datasheet (PDF)
9.1. Size:273K toshiba
tk200f04n1l.pdf
TK200F04N1LMOSFETs Silicon N-channel MOS (U-MOS-H)TK200F04N1LTK200F04N1LTK200F04N1LTK200F04N1L1. Applications1. Applications1. Applications1. Applications Automotive Switching Voltage Regulators DC-DC Converters Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.78 m (typ.) (VGS = 10 V)
9.2. Size:162K ixys
ixtk200n10p.pdf
VDSS = 100 VIXTK 200N10PPolarHTTMID25 = 200 APower MOSFET RDS(on) 7.5 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-264 (IXTK)VDSS TJ = 25 C to 175 C 100 VVDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVGS Continuous 20 VVGSM Transient 30 VGID25 TC = 25 C 200 AD(TAB)SID
9.3. Size:818K first silicon
ftk2005dfn23.pdf
SEMICONDUCTORFTK2005DFN23TECHNICAL DATADFNWB2 3-6L-CDual N-Channel MOSFETID V(BR)DSS RDS(on)MAX 13 Vm@10 14 @4.5Vm 15.5m@3.8V8A20V.5V 19m@227m@1.8VDESCRIPTIONThe FTK2005DFN23 uses advanced trench technology to provide excellent RDS(ON) low gate charge.It is ESD protected. This device is suitable for use as a uni-directional or bi-direction
Datasheet: 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.