TK35 Specs and Replacement
Type Designator: TK35
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Base Voltage |Vcb|: 16
V
Maximum Collector-Emitter Voltage |Vce|: 10
V
Maximum Emitter-Base Voltage |Veb|: 12
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 75
°C
Electrical Characteristics
Transition Frequency (ft): 2
MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: X18
-
BJT ⓘ Cross-Reference Search
TK35 datasheet
0.1. Size:245K toshiba
tk35e08n1.pdf 
TK35E08N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK35E08N1 TK35E08N1 TK35E08N1 TK35E08N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 10.0 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 80 V) (3) Enha... See More ⇒
0.2. Size:245K toshiba
tk35s04k3l.pdf
TK35S04K3L MOSFETs Silicon N-channel MOS (U-MOS ) TK35S04K3L TK35S04K3L TK35S04K3L TK35S04K3L 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 8.2 m (typ.) (VGS = 10 V) (2) Low leakage current... See More ⇒
0.3. Size:232K toshiba
tk35a08n1.pdf
TK35A08N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK35A08N1 TK35A08N1 TK35A08N1 TK35A08N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 10.0 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 80 V) (3) Enha... See More ⇒
0.4. Size:249K toshiba
tk35n65w5.pdf
TK35N65W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK35N65W5 TK35N65W5 TK35N65W5 TK35N65W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 130 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.08 (typ.) by used to Super Junction Str... See More ⇒
0.5. Size:237K toshiba
tk35a65w.pdf
TK35A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK35A65W TK35A65W TK35A65W TK35A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.068 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enh... See More ⇒
0.6. Size:246K toshiba
tk35n65w.pdf
TK35N65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK35N65W TK35N65W TK35N65W TK35N65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.068 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒
0.7. Size:240K toshiba
tk35a65w5.pdf
TK35A65W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK35A65W5 TK35A65W5 TK35A65W5 TK35A65W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 130 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.08 (typ.) by using Super Junction Struc... See More ⇒
0.8. Size:668K first silicon
ftk35n33pdfn56.pdf
SEMICONDUCTOR FTK35N03PDFN56 TECHNICAL DATA N-Channel Power MOSFET PDFN5 6-8L DESCRIPTION The FTK35N03PDFN56 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully characte... See More ⇒
0.9. Size:586K first silicon
ftk35n03pdfn33.pdf
SEMICONDUCTOR FTK35N03PDFN33 TECHNICAL DATA N-Channel Power MOSFET DESCRIPTION PDFN3.3 3.3-8L The FTK35N03PDFN33 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully char... See More ⇒
0.10. Size:246K inchange semiconductor
tk35e08n1.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK35E08N1 ITK35E08N1 FEATURES Low drain-source on-resistance RDS(on) 12.2m . (VGS = 10 V) Enhancement mode Vth =2.0 to 4.0V (VDS = 10 V, ID=0.3mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXI... See More ⇒
0.11. Size:252K inchange semiconductor
tk35a08n1.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK35A08N1 ITK35A08N1 FEATURES Low drain-source on-resistance RDS(ON) = 12.0m (VGS = 10 V) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.3mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAX... See More ⇒
0.12. Size:253K inchange semiconductor
tk35a65w5.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK35A65W5 ITK35A65W5 FEATURES Low drain-source on-resistance RDS(ON) = 0.08 (typ.) Enhancement mode Vth = 3 to 4.5V (VDS = 10 V, ID=2.1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING... See More ⇒
Detailed specifications: TK30
, TK30D
, TK31
, TK31D
, TK33
, TK33C
, TK34
, TK34C
, TIP42C
, TK35C
, TK36
, TK36C
, TK37
, TK37C
, TK38
, TK38C
, TK40
.
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