TK40A Datasheet, Equivalent, Cross Reference Search
Type Designator: TK40A
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 40 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 75 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 17
Noise Figure, dB: -
Package: X18
TK40A Transistor Equivalent Substitute - Cross-Reference Search
TK40A Datasheet (PDF)
tk40a06n1.pdf
TK40A06N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK40A06N1TK40A06N1TK40A06N1TK40A06N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 8.4 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 60 V)(3) Enhan
tk40a10j1.pdf
TK40A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS) TK40A10J1 Switching Regulator Applications Unit: mm Small gate charge: Qg = 76nC (typ.) Low drain-source ON-resistance: RDS (ON) = 11.5 m (typ.) High forward transfer admittance: |Yfs| = 90 S Low leakage current: IDSS = 10 A (max) (VDS = 100 V) Enhancement m
tk40a08k3.pdf
TK40A08K3 NMOS (U-MOS) TK40A08K3 : mm :RDS (ON) = 7.0 m () :|Yfs| = 93 S () :IDSS = 10 A () (VDS = 75 V)
tk40a10n1.pdf
TK40A10N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK40A10N1TK40A10N1TK40A10N1TK40A10N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 6.8 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 100 V)(3) Enha
tk40a10k3.pdf
TK40A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TK40A10K3 Switching Regulator Application Unit: mm Low drain-source ON resistance: RDS (ON) = 11.5 m (typ.) High forward transfer admittance: |Yfs| = 80 S Low leakage current: IDSS = 10 A (max) (VDS = 100 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M
tk40a06n1.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK40A06N1ITK40A06N1FEATURESLow drain-source on-resistance:RDS(ON) =10.4m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.3mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXI
tk40a10n1.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK40A10N1ITK40A10N1FEATURESLow drain-source on-resistance:RDS(ON) = 8.2m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXI
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
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