TK72
Datasheet, Equivalent, Cross Reference Search
Type Designator: TK72
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.325
W
Maximum Collector-Base Voltage |Vcb|: 30
V
Maximum Collector-Emitter Voltage |Vce|: 12
V
Maximum Emitter-Base Voltage |Veb|: 15
V
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 1
MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package:
TO5
TK72
Transistor Equivalent Substitute - Cross-Reference Search
TK72
Datasheet (PDF)
0.1. Size:234K toshiba
tk72a08n1.pdf 
TK72A08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK72A08N1TK72A08N1TK72A08N1TK72A08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.7 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3) Enhan
0.2. Size:246K toshiba
tk72e12n1.pdf
TK72E12N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK72E12N1TK72E12N1TK72E12N1TK72E12N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.6 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 120 V)(3) Enha
0.3. Size:246K toshiba
tk72e08n1.pdf
TK72E08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK72E08N1TK72E08N1TK72E08N1TK72E08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.6 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3) Enhan
0.4. Size:233K toshiba
tk72a12n1.pdf
TK72A12N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK72A12N1TK72A12N1TK72A12N1TK72A12N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.7 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 120 V)(3) Enha
0.5. Size:254K inchange semiconductor
itk72e12n1.pdf
isc N-Channel MOSFET Transistor ITK72E12N1FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
0.6. Size:253K inchange semiconductor
tk72a08n1.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK72A08N1ITK72A08N1FEATURESLow drain-source on-resistance:RDS(ON) = 4.5m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXI
0.7. Size:206K inchange semiconductor
tk72e12n1.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK72E12N1FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM
0.8. Size:246K inchange semiconductor
tk72e08n1.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK72E08N1ITK72E08N1FEATURESLow drain-source on-resistance:RDS(on) 4.3m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIM
0.9. Size:251K inchange semiconductor
tk72a12n1.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK72A12N1ITK72A12N1FEATURESLow drain-source on-resistance:RDS(ON) = 4.5m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXI
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