TN3013 Datasheet, Equivalent, Cross Reference Search
Type Designator: TN3013
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 18 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 350 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO92
TN3013 Transistor Equivalent Substitute - Cross-Reference Search
TN3013 Datasheet (PDF)
tn3019a.pdf
TN3019ATO-226CBENPN General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 500 mA andcollector voltages up to 80 V. Sourced from Process 12.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 80 VVCBO Collector-Base Voltage 1
mtn3018s3.pdf
Spec. No. : C320S3-R Issued Date : 2007.11.29 CYStech Electronics Corp.Revised Date : 2013.09.09 Page No. : 1/7 N-CHANNEL MOSFET MTN3018S3 Description The MTN3018S3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel
mmftn3019e.pdf
MMFTN3019E N-Channel Field Effect Transistor Applications Interfacing, switching Features Drain Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipment Gate Drive circuits can be simple Parallel use is easy SourceOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain-Source Vo
mmftn3018w.pdf
MMFTN3018W Silicon N-Channel MOSFET DrainApplications Interfacing, switching Gate1. Gate 2. Source 3. Drain SourceSOT-323 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain Source Voltage VDSS 30 VGate Source Voltage VGSS 20 VDrain Current - Continuous ID 100 mA Drain Current - Pulsed IDP 1) 400 200 mWTotal Power
mmftn3019e-ms.pdf
www.msksemi.comMMFTN3019E-MSSemiconductor CompianceAbsolute Maximum Ratings T = 25C unless otherwise notedASymbol Parameter Value UnitsVDS Drain-Source Voltage 30 VVGS Continuous Gate-Source Voltage 20V V3I Continuous Drain Current 100 mADP Power Dissipation 150 mWD2RJA Thermal Resistance from Junction to Ambient 833 C /W1. Gate2. SourceTSTG Storage Te
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
