2N5312 Specs and Replacement
Type Designator: 2N5312
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO61
2N5312 Substitution
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2N5312 datasheet
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Detailed specifications: 2N5306A, 2N5307, 2N5308, 2N5308A, 2N5309, 2N531, 2N5310, 2N5311, 13003, 2N5313, 2N5314, 2N5315, 2N5316, 2N5317, 2N5318, 2N5319, 2N532
Keywords - 2N5312 pdf specs
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History: BCP56-10T1 | 2N5314 | 2N4071 | BCP56-16T1 | 2N4226 | 2N5309 | 2N5320R
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