TN3414 Datasheet, Equivalent, Cross Reference Search
Type Designator: TN3414
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: TO92
TN3414 Transistor Equivalent Substitute - Cross-Reference Search
TN3414 Datasheet (PDF)
stn3414.pdf
STN3414 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN3414 is the N-Channel logic enhancement 20V/5.0A, RDS(ON) =30m(typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/4.5A, RDS(ON) =42m(typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/3.8A, RDS(ON) =50m(typ.)@VGS =1.8V provide excellent RDS
mtn3418cn3.pdf
Spec. No. : C570N3 Issued Date : 2012.02.03 CYStech Electronics Corp.Revised Date : 2012.07.30 Page No. : 1/7 N-CHANNEL MOSFET BVDSS 30VID 1.4AMTN3418CN3 RDSON(max) @VGS=10V 300m RDSON(max) @VGS=4V 450m Description The MTN3418CN3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage dri
mtn3410j3.pdf
Spec. No. : C433J3 Issued Date : 2008.12.24 CYStech Electronics Corp.Revised Date : 2010.07.22 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 100VID 50AMTN3410J3 RDS(ON) 30m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol Outline MTN3410
mtn3418s3.pdf
Spec. No. : C726S3 Issued Date : 2011.12.20 CYStech Electronics Corp.Revised Date : 2013.09.09 Page No. : 1/7 N-CHANNEL MOSFET BVDSS 30VID 1.9AMTN3418S3 RDSON(max) 110m Description The MTN3418S3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circ
mtn3418bn3.pdf
Spec. No. : C580N3 Issued Date : 2011.09.16 CYStech Electronics Corp.Revised Date : Page No. : 1/7 N-CHANNEL MOSFET BVDSS 30VID 1.7AMTN3418BN3 RDSON(max) 450m Description The MTN3418BN3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High speed switching Low-voltage drive(2.5V) Easily designed drive circuits Pb-free pac
mtn3410f3.pdf
Spec. No. : C795F3 Issued Date : 2011.03.01 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS : 100V RDS(ON) : 20m (max.) MTN3410F3 ID : 59A Description The MTN3410F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance a
mtn3418n3.pdf
Spec. No. : C726N3 Issued Date : 2009.08.21 CYStech Electronics Corp.Revised Date : 2013.11.29 Page No. : 1/7 N-Channel MOSFET BVDSS 30VID 1.9AMTN3418N3 RDSON(max) 110m Description The MTN3418N3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circ
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
