TN3414 Datasheet, Equivalent, Cross Reference Search
Type Designator: TN3414
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: TO92
TN3414 Transistor Equivalent Substitute - Cross-Reference Search
TN3414 Datasheet (PDF)
stn3414.pdf
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STN3414 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN3414 is the N-Channel logic enhancement 20V/5.0A, RDS(ON) =30m(typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/4.5A, RDS(ON) =42m(typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/3.8A, RDS(ON) =50m(typ.)@VGS =1.8V provide excellent RDS
mtn3418cn3.pdf
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Spec. No. : C570N3 Issued Date : 2012.02.03 CYStech Electronics Corp.Revised Date : 2012.07.30 Page No. : 1/7 N-CHANNEL MOSFET BVDSS 30VID 1.4AMTN3418CN3 RDSON(max) @VGS=10V 300m RDSON(max) @VGS=4V 450m Description The MTN3418CN3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage dri
mtn3410j3.pdf
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Spec. No. : C433J3 Issued Date : 2008.12.24 CYStech Electronics Corp.Revised Date : 2010.07.22 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 100VID 50AMTN3410J3 RDS(ON) 30m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol Outline MTN3410
mtn3418s3.pdf
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Spec. No. : C726S3 Issued Date : 2011.12.20 CYStech Electronics Corp.Revised Date : 2013.09.09 Page No. : 1/7 N-CHANNEL MOSFET BVDSS 30VID 1.9AMTN3418S3 RDSON(max) 110m Description The MTN3418S3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circ
mtn3418bn3.pdf
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Spec. No. : C580N3 Issued Date : 2011.09.16 CYStech Electronics Corp.Revised Date : Page No. : 1/7 N-CHANNEL MOSFET BVDSS 30VID 1.7AMTN3418BN3 RDSON(max) 450m Description The MTN3418BN3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High speed switching Low-voltage drive(2.5V) Easily designed drive circuits Pb-free pac
mtn3410f3.pdf
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Spec. No. : C795F3 Issued Date : 2011.03.01 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS : 100V RDS(ON) : 20m (max.) MTN3410F3 ID : 59A Description The MTN3410F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance a
mtn3418n3.pdf
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Spec. No. : C726N3 Issued Date : 2009.08.21 CYStech Electronics Corp.Revised Date : 2013.11.29 Page No. : 1/7 N-Channel MOSFET BVDSS 30VID 1.9AMTN3418N3 RDSON(max) 110m Description The MTN3418N3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circ
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .