TN3827 Datasheet. Specs and Replacement
Type Designator: TN3827 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO92
TN3827 Substitution
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TN3827 datasheet
Spec. No. C576F3 Issued Date 2011.11.19 CYStech Electronics Corp. Revised Date Page No. 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTN3820F3 ID 26A 64m VGS=10V, ID=18A Features RDSON(TYP) Low Gate Charge 65m VGS=4V, ID=10A Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compli... See More ⇒
Spec. No. C576J3 Issued Date 2011.11.19 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100V MTN3820J3 ID 24A 64m VGS=10V, ID=18A RDSON(TYP) 65m VGS=4V, ID=10A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline... See More ⇒
Detailed specifications: TN3709, TN3710, TN3711, TN3721, TN3724, TN3725, TN3742, TN3826, BC547B, TN3866, TN3900, TN3900A, TN3901, TN3903, TN3903R, TN3904, TN3904R
Keywords - TN3827 pdf specs
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History: TN3900A | TN4142 | 3DD128F_H8D | 3DD13002_RUD
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