TN5132 Datasheet. Specs and Replacement

Type Designator: TN5132  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 3.5 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO92

 TN5132 Substitution

- BJT ⓘ Cross-Reference Search

 

TN5132 datasheet

NO PDF data!

Detailed specifications: TN4965, TN5022, TN5023, TN5127, TN5128, TN5129, TN5130, TN5131, B772, TN5133, TN5134, TN5135, TN5136, TN5137, TN5138, TN5139, TN5140

Keywords - TN5132 pdf specs

 TN5132 cross reference

 TN5132 equivalent finder

 TN5132 pdf lookup

 TN5132 substitution

 TN5132 replacement