TN5400R Datasheet, Equivalent, Cross Reference Search
Type Designator: TN5400R
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 130 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO92
TN5400R Transistor Equivalent Substitute - Cross-Reference Search
TN5400R Datasheet (PDF)
mtn540j3.pdf
Spec. No. : C581J3 Issued Date : 2011.10.31 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100VMTN540J3 ID 25A49m VGS=10V, ID=18A RDSON(TYP) 48m VGS=4.5V, ID=10A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivale
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .