TN5551 Datasheet, Equivalent, Cross Reference Search
Type Designator: TN5551
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO92
TN5551 Transistor Equivalent Substitute - Cross-Reference Search
TN5551 Datasheet (PDF)
zxtn5551fl.pdf
ZXTN5551FL160V, SOT23, NPN High voltage transistorSummary BVCEO > 160VBVEBO > 6VIC(cont) = 600mA PD = 330mWComplementary part number ZXTP5401FLDescriptionCA high voltage NPN transistor in a small outline surface mount package.FeaturesB 160V rating SOT23 packageEApplicationsE High voltage amplificationCOrdering informationDevice Reel size Tape w
zxtn5551z.pdf
NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE DXT5551 ZXTN5551Z160V, SOT89, NPN high voltage transistor SummaryBVCEO > 160VBVEBO > 6VIC(cont) = 600mAPD = 1.2W Complementary part number ZXTP5401ZDescriptionCA high voltage NPN transistor in a small outline surface mount packageFeaturesB 160V rating SOT89 packageEApplicationsE High voltage amplificatio
zxtn5551g.pdf
NOT RECOMMENDED FOR NEW DESIGN A Product Line ofUSE DZT5551Diodes IncorporatedZXTN5551G160V NPN VOLTAGE TRANSISTOR Features Mechanical Data BVCEO > 160V Case: SOT223 Case material: Molded Plastic. Green Molding Compound. BVEBO > 6V UL Flammability Rating 94V-0 IC = 600mA Continuous Collector Current Moisture Sensitivity: Level 1 per J-STD-020
btn5551a3.pdf
Spec. No. : C208A3 Issued Date : 2003.06.06 CYStech Electronics Corp.Revised Date : 2012.10.02 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTN5551A3Description The BTN5551A3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BT
btn5551k3.pdf
Spec. No. : C208K3 Issued Date : 2012.06.28 CYStech Electronics Corp.Revised Date : 2012.10.02 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTN5551K3Features High breakdown voltage, BV 160V CEO Pb-free lead plating package Symbol Outline BTN5551K3 TO-92L BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Paramete
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
