TN5855 Datasheet. Specs and Replacement

Type Designator: TN5855  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 15 MHz

Collector Capacitance (Cc): 100 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO92

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TN5855 datasheet

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Detailed specifications: TN5401R, TN5447, TN5449, TN5550, TN5550R, TN5551, TN5551R, TN5816, D209L, TN5856, TN5857, TN5858, TN5910, TN6076, TN706, TN706A, TN708

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