TN835 Datasheet. Specs and Replacement
Type Designator: TN835 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO92
TN835 Substitution
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TN835 datasheet
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Detailed specifications: TN6076, TN706, TN706A, TN708, TN750, TN751, TN753, TN834, 2SD669, TN901, TN911, TN918, TN918R, TN929, TN929A, TN930, TN930A
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