All Transistors. TP2907R Datasheet

 

TP2907R Datasheet, Equivalent, Cross Reference Search


   Type Designator: TP2907R
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92

 TP2907R Transistor Equivalent Substitute - Cross-Reference Search

   

TP2907R Datasheet (PDF)

 8.1. Size:173K  cystek
btp2907a3.pdf

TP2907R
TP2907R

Spec. No. : C317A3-H Issued Date : 2002.06.11 CYStech Electronics Corp.Revised Date : 2005.06.29 Page No. : 1/5 General Purpose PNP Epitaxial Planar Transistor BTP2907A3Description The BTP2907A3 is designed for general purpose amplifier and high-speed switching, medium power applications. Low collector saturation voltage High speed switching. Complementa

 8.2. Size:258K  cystek
btp2907an3.pdf

TP2907R
TP2907R

Spec. No. : C317N3 Issued Date : 2003.06.30 CYStech Electronics Corp.Revised Date : 2008.03.21 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTP2907AN3Description The BTP2907AN3 is designed for general purpose amplifier applications. It is housed in the SOT-23 package which is designed for low power surface mount applications. Low V CE(sat)

 8.3. Size:192K  cystek
btp2907al3.pdf

TP2907R
TP2907R

Spec. No. : C317L3-H Issued Date : 2003.04.15 CYStech Electronics Corp.Revised Date : 2006.07.04 Page No. : 1/5 General Purpose PNP Epitaxial Planar Transistor BTP2907AL3Description The BTP2907AL3 is designed for general purpose amplifier applications. It is housed in the SOT-223 package which is designed for medium power surface mount applications. Low V CE(sat)

 8.4. Size:257K  cystek
btp2907sl3.pdf

TP2907R
TP2907R

Spec. No. : C824L3 Issued Date : 2003.07.31 CYStech Electronics Corp.Revised Date :2013.11.12 Page No. : 1/7 Low V PNP Epitaxial Planar Transistor CE(sat)BTP2907SL3Features Excellent DC current gain characteristics Low Saturation Voltage V (sat)=-0.5V(max) (I =-1A, I =-100mA). CE C B Pb-free lead plating and halogen-free package Symbol OutlineBTP2907SL3

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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