TP3402 PDF and Equivalents Search

 mtp3403n3.pdf

Spec. No. C422N3 Issued Date 2007.10.16 CYStech Electronics Corp. Revised Date 2013.10.24 Page No. 1/8 P-CHANNEL Enhancement Mode MOSFET BVDSS -30V MTP3403N3 ID -3.7A RDSON@VGS=-10V, ID=-3A 52m (typ) RDSON@VGS=-4.5V,ID=-2.6A 76m (typ) Features Low gate charge Compact and low profile SOT-23 package Advanced trench process technology High densit... See More ⇒

 mtp3403an3.pdf

Spec. No. C387N3 Issued Date 2007.06.13 CYStech Electronics Corp. Revised Date 2011.11.29 Page No. 1/7 P-CHANNEL Enhancement Mode MOSFET MTP3403AN3 Features V =-30V DS @V =-4.5V, I =-2A R =85m GS DS DS(ON) @V =-2.5V, I =-1A R =120m GS DS DS(ON) Advanced trench process technology High density cell design for ultra low on resistance Low ... See More ⇒

 mtp3403kn3.pdf

Spec. No. C865N3 Issued Date 2012.08.08 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Enhancement Mode MOSFET BVDSS -30V MTP3403KN3 ID -3.3A RDS(ON)@VGS=-10V, ID=-2.5A 63m (typ) RDS(ON)@VGS=-4.5V, ID=-1.35A 100m (typ) RDS(ON)@VGS=-4V, ID=-1.35A 114m (typ) Features Advanced trench process technology High density cell design for ultra low... See More ⇒

 mtp3401n3.pdf

Spec. No. C388N3 Issued Date 2007.06.13 CYStech Electronics Corp. Revised Date 2017.06.19 Page No. 1/9 P-CHANNEL Enhancement Mode MOSFET BVDSS -30V MTP3401N3 ID@VGS=-10V, TA=25 C -4.2A RDS(ON)@VGS=-10V, ID=-4.2A 46m (typ) RDS(ON)@VGS=-4.5V, ID=-4A 51m (typ) RDS(ON)@VGS=-2.5V, ID=-1A 59m (typ) Features Advanced trench process technology High density c... See More ⇒

 mmftp3401.pdf

MMFTP3401 P-Channel Enhancement Mode MOSFET 1. Gate 2. Source 3. Drain TO-236 Plastic Package Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage -VDS 30 V Gate-Source Voltage VGS 12 V Drain Current T = 25 4 A -ID A 3.2 T = 70 A Peak Drain Current 1) -IDM 27 A Power Dissipation 2) T = 25 A 1.4 PD W 0.9 T = 70 A Junction and St... See More ⇒

 stp3407.pdf

STP3407 -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STP3407 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =38m (typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.0A, RDS(ON) =58m (typ.)@VGS =-4.5V high cell density. advanced trench technology to provide excellent RDS(ON). Super high density cell desig... See More ⇒

 stp3401a.pdf

STP3401A -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STP3401A is the P-Channel logic -30V/-4.3A, RDS(ON) =50m (typ.)@VGS =-10V enhancement mode power field effect transistor is -30V/-3.5A, RDS(ON) =58m (typ.)@VGS =-4.5V produced using high cell density. advanced trench -30V/-2.5A, RDS(ON) =73m (typ.)@VGS =-2.5V technology to provide exc... See More ⇒

 stp3401.pdf

STP3401 -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STP3401 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m (typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.5A, RDS(ON) =50m (typ.)@VGS =-4.5V high cell density. advanced trench technology to -30V/-2.5A, RDS(ON) =65m (typ.)@VGS =-2.5V provide exce... See More ⇒

 jmtp340p03a.pdf

JMTP340P03A Description JMT P-channel Enhancement Mode Power MosFET Features Applications -30V, -7A Load Switch RDS(ON) ... See More ⇒