TP3404 Datasheet, Equivalent, Cross Reference Search
Type Designator: TP3404
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.56 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: TO92
TP3404 Transistor Equivalent Substitute - Cross-Reference Search
TP3404 Datasheet (PDF)
mtp3403n3.pdf
Spec. No. : C422N3 Issued Date : 2007.10.16 CYStech Electronics Corp.Revised Date : 2013.10.24 Page No. : 1/8 P-CHANNEL Enhancement Mode MOSFET BVDSS -30VMTP3403N3 ID -3.7ARDSON@VGS=-10V, ID=-3A 52m(typ)RDSON@VGS=-4.5V,ID=-2.6A 76m(typ)Features Low gate charge Compact and low profile SOT-23 package Advanced trench process technology High densit
mtp3403an3.pdf
Spec. No. : C387N3 Issued Date : 2007.06.13 CYStech Electronics Corp.Revised Date : 2011.11.29 Page No. : 1/7 P-CHANNEL Enhancement Mode MOSFET MTP3403AN3 Features V =-30V DS@V =-4.5V, I =-2A R =85m GS DSDS(ON)@V =-2.5V, I =-1A R =120m GS DSDS(ON) Advanced trench process technology High density cell design for ultra low on resistance Low
mtp3403kn3.pdf
Spec. No. : C865N3 Issued Date : 2012.08.08 CYStech Electronics Corp.Revised Date : Page No. : 1/8 P-Channel Enhancement Mode MOSFET BVDSS -30VMTP3403KN3 ID -3.3ARDS(ON)@VGS=-10V, ID=-2.5A 63m(typ) RDS(ON)@VGS=-4.5V, ID=-1.35A 100m(typ)RDS(ON)@VGS=-4V, ID=-1.35A 114m(typ)Features Advanced trench process technology High density cell design for ultra low
mtp3401n3.pdf
Spec. No. : C388N3 Issued Date : 2007.06.13 CYStech Electronics Corp.Revised Date :2017.06.19 Page No. : 1/9 P-CHANNEL Enhancement Mode MOSFET BVDSS -30VMTP3401N3 ID@VGS=-10V, TA=25C -4.2A RDS(ON)@VGS=-10V, ID=-4.2A 46m(typ)RDS(ON)@VGS=-4.5V, ID=-4A 51m(typ)RDS(ON)@VGS=-2.5V, ID=-1A 59m(typ)Features Advanced trench process technology High density c
mmftp3401.pdf
MMFTP3401 P-Channel Enhancement Mode MOSFET 1. Gate 2. Source 3. DrainTO-236 Plastic PackageAbsolute Maximum Ratings Parameter Symbol Value UnitDrain-Source Voltage -VDS 30 VGate-Source Voltage VGS 12 VDrain Current T = 25 4 A-ID A 3.2 T = 70 APeak Drain Current 1) -IDM 27 APower Dissipation 2) T = 25A1.4 PD W 0.9 T = 70AJunction and St
stp3407.pdf
STP3407 -30V P-Channel Enhancement Mode MOSFETDESCRIPTION FEATUREThe STP3407 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =38m(typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.0A, RDS(ON) =58m(typ.)@VGS =-4.5V high cell density. advanced trench technology to provide excellent RDS(ON). Super high density cell desig
stp3401a.pdf
STP3401A -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STP3401A is the P-Channel logic -30V/-4.3A, RDS(ON) =50m(typ.)@VGS =-10V enhancement mode power field effect transistor is -30V/-3.5A, RDS(ON) =58m(typ.)@VGS =-4.5V produced using high cell density. advanced trench -30V/-2.5A, RDS(ON) =73m(typ.)@VGS =-2.5V technology to provide exc
stp3401.pdf
STP3401 -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STP3401 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m(typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.5A, RDS(ON) =50m(typ.)@VGS =-4.5V high cell density. advanced trench technology to -30V/-2.5A, RDS(ON) =65m(typ.)@VGS =-2.5V provide exce
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
