All Transistors. TP3417 Datasheet

 

TP3417 Datasheet and Replacement


   Type Designator: TP3417
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 180
   Noise Figure, dB: -
   Package: TO92
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TP3417 Datasheet (PDF)

 9.1. Size:353K  cystek
 mtp3413n3.pdf pdf_icon

TP3417

Spec. No. : C394N3 Issued Date : 2012.01.19 CYStech Electronics Corp.Revised Date : 2014.03.04 Page No. : 1/9 P-Channel Logic Level Enhancement Mode MOSFET BVDSS -20VMTP3413N3 ID -4.9AVGS=-4.5V, ID=-4.3A 39m VGS=-2.5V, ID=-2.5ARDSON(TYP) 50m VGS=-1.8V, ID=-2A 65m Features 1.8V gate rated Advanced trench process technology High density cell desig

 9.2. Size:293K  cystek
 mtp3415kn3.pdf pdf_icon

TP3417

Spec. No. : C589N3 Issued Date : 2010.11.09 CYStech Electronics Corp.Revised Date : 2014.07.11 Page No. : 1/ 9 P-Channel Enhancement Mode MOSFET BVDSS -20VID -4.4AVGS=-4.5V, ID=-4A MTP3415KN3 33m VGS=-2.5V, ID=-4A 42m RDSON(TYP) VGS=-1.8V, ID=-2A 52m Features ESD protected 3KVAdvanced trench process technology High density cell design for ultra lo

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: BC860AW | TP9380 | BCP627A | BD805 | TP3694 | BD810G | BC860AR

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