TP3417 Datasheet. Specs and Replacement

Type Designator: TP3417  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: TO92

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TP3417 datasheet

 9.1. Size:353K  cystek

 mtp3413n3.pdf pdf_icon

TP3417

Spec. No. C394N3 Issued Date 2012.01.19 CYStech Electronics Corp. Revised Date 2014.03.04 Page No. 1/9 P-Channel Logic Level Enhancement Mode MOSFET BVDSS -20V MTP3413N3 ID -4.9A VGS=-4.5V, ID=-4.3A 39m VGS=-2.5V, ID=-2.5A RDSON(TYP) 50m VGS=-1.8V, ID=-2A 65m Features 1.8V gate rated Advanced trench process technology High density cell desig... See More ⇒

 9.2. Size:293K  cystek

 mtp3415kn3.pdf pdf_icon

TP3417

Spec. No. C589N3 Issued Date 2010.11.09 CYStech Electronics Corp. Revised Date 2014.07.11 Page No. 1/ 9 P-Channel Enhancement Mode MOSFET BVDSS -20V ID -4.4A VGS=-4.5V, ID=-4A MTP3415KN3 33m VGS=-2.5V, ID=-4A 42m RDSON(TYP) VGS=-1.8V, ID=-2A 52m Features ESD protected 3KV Advanced trench process technology High density cell design for ultra lo... See More ⇒

Detailed specifications: TP3398, TP3402, TP3403, TP3404, TP3405, TP3414, TP3415, TP3416, 2SC945, TP3563, TP3564, TP3565, TP3566, TP3567, TP3568, TP3569, TP3638

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