TP3900A Datasheet. Specs and Replacement
Type Designator: TP3900A 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 18 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Package: TO92
TP3900A Substitution
- BJT ⓘ Cross-Reference Search
TP3900A datasheet
Spec. No. C318N3-H Issued Date 2002.06.11 CYStech Electronics Corp. Revised Date 2013.09.27 Page No. 1/7 General Purpose PNP Epitaxial Planar Transistor BTP3906N3 Description Complementary to BTN3904N3. Pb-free lead plating and halogen-free package Symbol Outline BTP3906N3 SOT-23 B Base C Collector E Emitter Ordering Information Device Package... See More ⇒
Spec. No. C318N3-H Issued Date 2002.06.11 CYStech Electronics Corp. Revised Date 2012.01.11 Page No. 1/6 General Purpose PNP Epitaxial Planar Transistor BTP3906A3 Description High Cutoff Frequency. Complementary to BTN3904A3. Pb-free lead plating and halogen-free package Symbol Outline BTP3906A3 TO-92 B Base C Collector E Emitter E B C A... See More ⇒
Detailed specifications: TP3711, TP3721, TP3725, TP3742, TP3826, TP3827, TP3866, TP3900, BD222, TP3901, TP3903, TP3903R, TP3904, TP3904R, TP3905, TP3905R, TP3906
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