TRR50-12 Datasheet, Equivalent, Cross Reference Search

   Type Designator: TRR50-12
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 350 W
   Maximum Collector-Base Voltage |Vcb|: 1000 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 50 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO66

TRR50-12 Transistor Equivalent Substitute - Cross-Reference Search