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2N5365 Specs and Replacement

Type Designator: 2N5365

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.36 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO92

 2N5365 Substitution

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2N5365 datasheet

 ..1. Size:218K  no

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2N5365

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 9.1. Size:60K  fairchild semi

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2N5365

2N5366 PNP General Purpose Amplifier This device is designed for general purpose amplifiers applications at collector currents to 300mA. Sourced from process 68. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base ... See More ⇒

 9.2. Size:43K  microelectronics

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2N5365

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Detailed specifications: 2N5351, 2N5354, 2N5355, 2N5356, 2N5357, 2N535A, 2N535B, 2N536, 2SA1943, 2N5366, 2N5367, 2N5368, 2N5369, 2N537, 2N5370, 2N5371, 2N5372

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