UN9116S Specs and Replacement
Type Designator: UN9116S
SMD Transistor Code: 6F
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 290
Package: SS-MINI
UN9116S Substitution
- BJT ⓘ Cross-Reference Search
UN9116S datasheet
Transistors with built-in Resistor UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ Silicon PNP epitaxial planer transistor Unit mm For digital circuits 1.6 0.15 0.4 0.8 0.1 0.4 Features 1 Costs can be reduced through downsizing of the equipment and reduction of the number of parts. 3 SS-Mini type package, allowing automatic in... See More ⇒
Detailed specifications: UN9112, UN9113, UN9114, UN9115Q, UN9115R, UN9115S, UN9116Q, UN9116R, A42, UN9117Q, UN9117R, UN9117S, UN9118, UN9119, UN911AJ, UN911BJ, UN911CJ
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